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| Ordering number : EN5424A N-Channel Silicon MOSFET 2SK2347 High-Voltage, High-Speed Switching Applications Features * Low ON resistance, ultrahigh-speed switching. * High reliability (Adoption of HVP process). Package Dimensions unit: mm 2131-TO-3JML [2SK2347] Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions 1 : Gate 2 : Drain 3 : Source SANYO: TO-3JML PW10s, duty cycle1% Tc=25C Ratings 1000 30 20 40 4.6 160 150 -55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter D-S Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to Source Leak Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss Conditions ID=1mA, VGS=0 VDS=1000V, VGS=0 VGS=30V, VDS=0 VDS=10V, ID=1mA VDS=20V, ID=10A ID=10A, VGS=10V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz Ratings min 1000 typ max 1.0 100 3.5 10 0.6 3300 750 500 0.8 Unit V mA nA V S pF pF pF 1.5 5.0 Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 72597TS (KOTO) TA-1033 No.5424-1/4 2SK2347 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Reverse Recovery Time Symbol td(on) tr td(off) tf VSD trr Conditions Ratings min typ 45 200 900 250 0.5 max Unit ns ns ns ns V s ID=10A, VGS=10V, VDD=200V, RGS=50 IS=20A, VGS=0 IS=20A, di/dt=100A/s 1.5 1.0 Switching Time Test Circuit 20 I D - VDS =1 50 I D - VDS VGS = 10V 6V 0V GS 5V 40 16 Drain Current, I D - A V Drain Current, I D - A 12 30 6V 4.5V 8 20 5V 4V 4 3.5V 3V 0 0 4 8 12 16 20 10 4V 0 0 3V 10 20 30 40 50 Drain-to-Source Voltage, VDS - V 40 36 32 Drain-to-Source Voltage, VDS - 40 36 V VG S =10V I D - VGS VDS =20V I D - Tc Tc=-25C 32 Drain Current, I D - A Drain Current, I D - A 28 24 20 16 12 8 4 0 0 2 4 6 8 10 12 14 28 24 20 16 12 8 4 0 -80 -40 0 40 80 120 160 25C VD S= 20 V 75C 10V Gate-to-Source Voltage, VGS - V Case Temperature, Tc - C No.5524-2/4 2SK2347 3.6 3.2 VGS(off) - Tc VDS =10V ID =1mA 3 2 SW Time - I D t d(off) Switching Time, SW Time - ns Cutoff Voltage, VGS(off) - V 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 -80 -40 0 40 80 120 160 1000 7 5 3 2 VDD =200V VGS =10V P.W.= 1s D.C.0.5% tf tr 100 7 5 3 2 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 t d(on) Case Temperature, Tc - C Drain Current, ID - A ID =10A Tc=25C 2.0 1.2 R DS(on) - VGS Static Drain-to-Source ON-State Resistance, RDS (on) - R DS(on) - Tc ID =10A Static Drain-to-Source ON-State Resistance, RDS (on) - 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0 2 4 6 10 Voltage, VGS - 8 12 14 1.6 1.2 0.8 V =10 VDS V 20 0.4 0 -80 -40 Gate-to-Source 3 V Tc =25C 3 Case Temperature, Tc - C 0 40 80 120 160 | yf s | - I D Forward Transfer Admittance, | yfs | - S | yf s | - I D VD S = 20V VG S = 10V 25 C Forward Transfer Admittance, | yfs | - S 2 10 2 10 7 5 3 2 1.0 7 5 3 2 7 0.1 2 3 5 7 1.0 2 3 5 VDS =10V 7 5 3 2 1.0 7 5 3 2 7 0.1 2 3 5 7 1.0 2 3 5 20V Tc= -25 C C 75 7 10 2 3 7 10 2 3 Drain Current, ID - A 2 10000 7 Drain Current, ID - A VG S =0 f= 1MHz 7 5 IDP 3 2 Ciss,Coss,Crss - VDS Ciss,Coss,Crss - pF 5 3 2 1000 7 5 3 2 100 Drain Current, ID - A Ciss 10 7 5 3 2 ,,,,,,, ,,,,,,, ,,,,,,, ,,,,,,, ,,,,,,, ASO 5s 10 s 100 s 1m 10 s DC 10 op ms 0m s on Coss 1.0 Operation in this area 7 is limited by RDS(on). 5 3 2 0.1 Tc =25C 7 Single pulse 5 2 3 10 er ati Crss 0 4 8 12 16 20 24 28 32 5 7 100 2 3 5 7 1000 2 Drain-to-Source Voltage, VDS - V Drain-to-Source Voltage, VDS - V No.5424-3/4 2SK2347 5 P D - Ta Allowable Power Dissipation, PD - W 200 P D - Tc Allowable Power Dissipation, PD - W 4.6 4 160 3 No he at 120 sin k 2 80 1 40 0 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta - C Case Temperature, Ta - C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property lose. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 1997. Specifications and information herein are subject to change without notice. No.5424-4/4 |
Price & Availability of 2SK2347
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